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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
V GS = 0 V, I D = -250 μ A
I D = -250 μ A, Referenced to 25 ° C
-20
-16
V
mV/ ° C
? T J
Coefficient
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V DS = -16 V, V GS = 0 V
V GS = 8 V, V DS = 0 V
V GS = -8 V, V DS = 0 V
-1
100
-100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
Gate Threshold Voltage
Gate Threshold Voltage
V DS = V GS , I D = -250 μ A
I D = -250 μ A, Referenced to 25 ° C
-0.4
-0.7
2.5
-1.5
V
mV/ ° C
? T J
Temperature Coefficient
R DS(on)
Static Drain-Source
On-Resistance
V GS = -4.5 V, I D = -4 A
V GS = -4.5 V, I D = -4 A, T J =125 ° C
0.054
0.076
0.065
0.105
?
V GS = -2.5 V, I D = -3.2 A
0.077
0.100
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = -4.5 V, V DS = -5 V
V DS = -5 V, I D = -4 A
-10
9
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -10 V, V GS = 0 V
f = 1.0 MHz
640
180
90
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -10 V, I D = -1 A
V GS = -4.5 V, R GEN = 6 ?
V DS = -10 V, I D = -4 A
V GS = -4.5 V,
11
19
26
35
7.2
1.7
1.6
20
30
42
55
10
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
-1.3
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = -1.3 A
(Note 2)
-0.75
-1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 78 ° C/W when mounted on a 1.0 in 2 pad of 2 oz. copper.
b) 156 ° C/W when mounted on a minimum pad of 2 oz.copper.
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
Si3443DV, REV A
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